| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2010-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f1b517800ef78c3fb56e3181c72e9aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bca93727181d96879d15f9ae7cec0e2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_accd4d5e65d72db9467b128a18777a33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5279bc0ae1450de664f316da3f097499 |
| publicationDate |
2011-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7994019-B1 |
| titleOfInvention |
Silicon-ozone CVD with reduced pattern loading using incubation period deposition |
| abstract |
Aspects of the disclosure pertain to methods of depositing conformal silicon oxide layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface having heterogeneous materials and/or a heterogeneous pattern density distribution. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on underlying material and pattern density while still being suitable for non-sacrificial applications. Reduction in dependence on pattern density is achieved by terminating deposition near the end of an incubation period. Multiple deposition cycles may be conducted in series since the beneficial nature of the incubation period may repeat after a pause in deposition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8524004-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8329262-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450191-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8716154-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8617989-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011014798-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889566-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8476142-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8563445-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8242031-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10647578-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8551891-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012258604-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011223774-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8980382-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9285168-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8304351-B2 |
| priorityDate |
2010-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |