| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b454fe6cc4949fc5893723c868b9b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e84a168fb4527e7da9978b9d13869b32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dfce707a3acad2d0a7a38f6df1922a89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_635e976136eb4c195a3186570ec2cecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0218 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-2415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-027 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J8-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-02 |
| filingDate |
2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3be42c5b0984fd8a7d7659f8630336de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef1df2ae75418739381a6c2d6620594f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_862e48e60343d29e78685ac74f695a2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7dc329de592f719214dab5705206437 |
| publicationDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8425855-B2 |
| titleOfInvention |
Reactor with silicide-coated metal surfaces |
| abstract |
In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10526213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017253494-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10836650-B2 |
| priorityDate |
2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |