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filingDate 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e13300b4947de15e063b8d9aa20a52c
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publicationDate 2008-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7462341-B2
titleOfInvention Method for production of trichlorosilane and silicon for use in the production of trichlorosilane
abstract The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCl gas at a temperature between 250 and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 30 and 10.000 ppm chromium. The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCl gas, containing between 30 and 10.000 ppm 10 chromium, the remaining except for normal impurities being silicon.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012114546-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010263734-A1
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priorityDate 2003-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 42.