| abstract |
Methods for forming blind wafer interconnects (BWIs) from the back side surface of a substrate structure to the underside of a bond pad on the opposing surface includes the formation of a blind hole from the back side surface, forming a passivating layer therein, removing passivation material from the blind hole bottom, depositing at least one conductive layer within the blind hole, and filling the blind hole with solder or other conductive material or a dielectric material. |