| abstract |
A semiconductor device includes a first substrate and a second substrate being bonded to each other, a posterior interconnect layer interposed between the first and second substrates, a weld pad disposed in the posterior interconnect layer, and a first annular opening disposed in the first substrate. The device further includes a dielectric layer formed in the first opening, a via surrounded by the first annular opening, and an interconnect layer disposed in the via. The device also includes a conductive bump disposed on the interconnect layer and electrically connected to the weld pad through the interconnect layer. |