| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ef81696280b2570ffaf564c1a572e5a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 |
| filingDate |
2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_706940e1ad1700f4d1235915296244d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_502ff0a0438d527bbf175665b5b0738b |
| publicationDate |
2010-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7695345-B2 |
| titleOfInvention |
Polishing compound for semiconductor integrated circuit device, polishing method and method for producing semiconductor integrated circuit device |
| abstract |
To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008070412-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011207327-A1 |
| priorityDate |
2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |