http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1112561-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
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filingDate 1998-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a502aadc0cb984c9018ac0fb16897108
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publicationDate 1999-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1112561-A
titleOfInvention Abrasive for semiconductor and method for producing abrasive for semiconductor
abstract PROBLEM TO BE SOLVED: To provide an abrasive for semiconductors, which reduces scratches on the surface of an insulating film after polishing a semiconductor wafer, reduces the amount of remaining Na and the like, and has no growth of microorganisms even after long-term storage. . SOLUTION: The weight average particle diameter is 0.1 to 0.35 μm. A semiconductor polishing slurry containing cerium oxide particles having a crystallite diameter of 150 to 600 °. The cerium oxide particles are manufactured by wet-pulverizing high-purity cerium carbonate, drying and firing. The content of a is 10 ppm or less.
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