| abstract |
A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula:n n[R 1 2 N—NH] n Si(R 2 ) 4-n n nwhere each R 1 is independently selected from alkyl groups of C 1 to C 6 ; each R 2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4. |