| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55c9155d91a8c55b0275174f26c96104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4971fff44ffafd5e79a4352aaba0a373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f76a585eefed281cd9299aa2bea8d4e |
| publicationDate |
2012-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2465861-A1 |
| titleOfInvention |
Amino vinylsilane precursors for compressively stressed SiN films |
| abstract |
The present invention is related to the deposition of intrinsically compressively stressed silicon nitride (SiN) or silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor using plasma enhanced chemical vapor deposition (PECVD). An exemplary amino vinylsilane-based precursor is Bis(iso-propylamino)divinylsilane (BIPADVS). |
| priorityDate |
2008-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |