| abstract |
In accordance with the present invention, a temperature-controlled ceramic liner or barrier is used adjacent to process chamber surfaces during a plasma-comprising process, with the liner or barrier temperature being set to reduce the formation of deposits upon or to aid in the removal of deposits from the liner surface during the processing of a semiconductor substrate within the process chamber. In the alternative, cleaning of the process chamber surface is carried out after the semiconductor substrate is removed from the chamber, and the liner or barrier temperature is set to assist in the removal of deposits from the liner or barrier surface. Deposits accumulate on some process chamber surfaces faster than on others. Since the rate of deposit formation or removal is temperature dependent, the temperature-controlled ceramic liner may be constructed to enable independent temperature settings at different locations within the liner. When multiple temperature-controllable barriers are used, each barrier may be set at a different temperature in proportion to the deposit formation reduction or removal requirements in the area of the process chamber protected by the particular barrier. In a preferred embodiment of the invention, the plasma used either during the semiconductor substrate processing or during a cleaning process after removal of the substrate from the process chamber is generated externally from the process chamber and is fed into the process chamber through a conduit. The conduit or at least the interior surface of the conduit which contacts the plasma is comprised of a halogen-containing material. The halogen used in the conduit material may be selected in consideration of the active species which is to be fed through the interior of the conduit. |