| abstract |
A method is shown for polishing a workpiece such as a semiconductor wafer. A polishing composition is first formed which includes (1) a polishing media particle; and (2) a film forming binder for suspending the particle and forming a temporary film on an exposed surface of the workpiece, the temporary film being dissolvable in a subsequently applied polishing wash, whereby the polishing media particle is freed to polish the workpiece. The polishing composition is applied to the surface of the semiconductor wafer in a spin coating operation and thereafter cured in a hot plate bake or a furnace operation. In order to polish the workpiece, a polishing wash is applied to either or both of the surface of the workpiece or a polishing pad and thereafter causing the pad to be sufficiently proximate to the surface of the workpiece at a pressure and for a time sufficient to polish and planarize the workpiece. |