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filingDate 1985-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1986-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1986-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4582581-A
titleOfInvention Boron trifluoride system for plasma etching of silicon dioxide
abstract BF3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed. In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.
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