Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06376d805362e4d41dbab4185be9d886 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
1985-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1986-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1db1b3e4fe4f4f3b9a0e017aacb50bb2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d864cc558c9b4040c68271380fac9a1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e630c5592f266c0093948c114158d2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09e0d5af87109a81e0d4b80ff1aafe9d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ad1f788f8fa624cc67683def0722294 |
publicationDate |
1986-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-4582581-A |
titleOfInvention |
Boron trifluoride system for plasma etching of silicon dioxide |
abstract |
BF3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed. In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4786359-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1557875-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012227440-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6455232-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7247573-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6165375-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6228775-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4806199-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6022485-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6254719-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005142863-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6406640-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0482519-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5356515-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5302236-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6475920-B2 |
priorityDate |
1985-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |