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filingDate 2001-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6475920-B2
titleOfInvention Plasma etching method using low ionization potential gas
abstract An etching method for forming an opening includes providing a substrate assembly having a surface and an oxide layer thereon. A patterned mask layer is provided over the oxide layer exposing a portion of the oxide layer. A plasma including one or more of CxHyFz+ ions and CxFz+ ions and further including xenon or krypton ions is used to etch the oxide layer at the exposed portion to define the opening in the oxide layer while simultaneously depositing a polymeric residue on a surface defining the opening. The etching is continued until the opening in the oxide layer is selectively etched to the surface of the substrate assembly.
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