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filingDate 1982-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1983-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef3a2d840095a263767877470d45704d
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publicationDate 1983-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4405406-A
titleOfInvention Plasma etching process and apparatus
abstract A plasma etching process and apparatus wherein a gas plasma comprising dichlorofluoro-methane (CHCl 2 F) etches a film.
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Total number of triples: 26.