| abstract |
A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate, said process comprising the steps: n (a) forming deep wide trenches in the planar surface of the silicon substrate; n (b) forming a thin layer of silicon dioxide on the planar surface of the silicon substrate and the exposed silicon surfaces of said deep wide trenches; n (c) applying resin glass (polysiloxane) to the planar surface of said semiconductor substrate and within said deep wide trenches; n (d) spinning off at least a portion of the resin glass on the planar surface of the substrate; n (e) baking the substrate at a low temperature; n (f) exposing the resin glass contained within the deep wide trenches of substrate to the energy of an E-beam; n (g) developing the resin glass contained on said substrate in a solvent; n (h) heating said substrate in oxygen to convert said resin glass contained within said deep wide trenches to silicon dioxide; n (i) depositing a layer of silicon dioxide to provide a planar silicon dioxide surface on the exposed the surface of said substrate; and n (j) planarize exposed silicon dioxide surface to silicon of substrate. n A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate as recited in the preceding paragraph, wherein the following steps are performed in lieu of step i of claim 1, said steps comprising: n (i-1) apply a second thin layer of resin glass; and n (i-2) convert said resin glass to silicon dioxide. |