http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9636070-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c35b72d5b17e31ff1ccab2d9a0a02161 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1996-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce0a6df3060d8020b18faa6e35082828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4edba20620af07d733461a722559a1b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44afcf4737839d87ae64a32e9ba01237 |
| publicationDate | 1997-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-9636070-A3 |
| titleOfInvention | Method for curing spin-on-glass film utilizing electron beam radiation |
| abstract | An electron beam exposure method is described which provides a means of curing spin-on-glass (28) formed on a semiconductor wafer (27) which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system, including a cathode (22), an anode (26) and power supplies (29, 30), in a soft vacuum environment. A wafer (27) coated with uncured siloxane spin-on-glass (28) is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer (27) is exposed to a predetermined dose of electrons (44) while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate or wafer (27) cooled before removing from vacuum. |
| priorityDate | 1995-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.