| abstract |
A semiconductor device having an insulating layer made of boron phosphide which is epitaxially deposited on a silicon substrate as a first layer. A silicon layer is epitaxially deposited on the first epitaxial layer as a second layer. In this case, integrated circuits are formed in the second epitaxial layer the electronic elements of which are electrically isolated with one another and the second epitaxial layer is also electrically isolated from the silicon substrate by the first epitaxial layer made of boron phosphide which shows high electrical resistance. Further, a method of fabricating a semiconductor device having a step of depositing an epitaxial layer of boron phosphide on a silicon substrate. |