| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5de41645f886d763d3f73e3d3fc113cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-967 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
1992-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1993-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f6d3a6fcff046327d6cee14baa31e7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d850646f803572deb9d36d92db3356a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc3a5179338de0622fcd4c32adff185 |
| publicationDate |
1993-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5232862-A |
| titleOfInvention |
Method of fabricating a transistor having a cubic boron nitride layer |
| abstract |
A multilayer structure for use in forming a transistor which may be suitable for high temperature applications is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride is epitaxially grown using laser ablation techniques and provides an electrically resistive and thermally conductive barrier. An active layer of epitaxial silicon is then grown from the layer of cubic boron nitride, such that the overlaying layer of epitaxial silicon is in crystallographic registry with the layer of boron nitride which is in crystallographic registry with the underlying silicon substrate. Appropriately doped source and drain regions and a gate electrode are provided to form the transistor. A clean crystallographic lattice match between the cubic boron nitride and surrounding silicon is obtained, thereby minimizing any stresses due to a mismatch in lattice constants and permitting the overlaying silicon active layer to be extremely thin. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005023579-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006118867-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1017108-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1017108-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7427538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6891236-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7671414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008303116-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7491655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011039377-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5527735-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010038717-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115323475-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7642544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004017398-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004017398-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875932-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173495-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2350721-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005009278-A1 |
| priorityDate |
1990-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |