| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5de41645f886d763d3f73e3d3fc113cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-904 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate |
1992-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1994-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d850646f803572deb9d36d92db3356a |
| publicationDate |
1994-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5330611-A |
| titleOfInvention |
Cubic boron nitride carbide films |
| abstract |
Thin films of cubic boron nitride carbide are provided on an underlying silicon substrate. The cubic boron nitride carbide films are deposited using laser ablation methods. The boron nitride film has a crystallographic lattice constant which can be varied depending upon the desired film composition and processing parameters. Preferably, the resulting thin film composition is characterized by a chemical formula of (BN) 1-x C x where x is about 0.2. The resulting films are particularly suitable for wear resistance and semiconducting applications over a wide range of temperatures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9222166-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010187766-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6388366-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6503578-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008003361-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6054185-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6069436-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5483920-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6593015-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11677041-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012103182-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005241340-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017133543-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111118477-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005121047-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5976716-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111509053-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005064724-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7556840-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987873-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5948541-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8074865-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6153061-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5646474-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02080228-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02080228-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6117533-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6086959-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6096436-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005249978-A1 |
| priorityDate |
1989-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |