Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2016-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a89296dde3cca496b0485fe6455ce41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ff0d3b1295f8d410ecf1bafae12686e |
publicationDate |
2018-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2018190817-A1 |
titleOfInvention |
Method and structure to provide integrated long channel vertical finfet device |
abstract |
A vertical fin field effect transistor includes a semiconductor fin disposed over a well region and a gate conductor layer disposed over a sidewall of the fin, and extending laterally over a top surface of the well region adjacent to the fin. The extension of the gate conductor over the bottom source/drain effectively increases the channel length of the vertical FinFET device independent of the fin height. A bottom source/drain region is laterally adjacent to the well region such that the portion of the well region covered by the laterally extended gate stack is between the bottom source/drain region and the portion of the well region immediately under the fin. A top source/drain region is located above the fin. The device is operated in circuits by use of electrical contacts to the bottom source/drain, the gate conductor, and the top source/drain. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11527526-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023230848-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019081156-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069686-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019206853-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019088755-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964812-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019088754-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903201-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381068-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811507-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020013891-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811508-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453844-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840373-B2 |
priorityDate |
2016-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |