Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
filingDate |
2017-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97fdcd07cb106438bda72fc4c4cbdf2c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bc5c5f45af232f10ee777d2fdc7d16d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_888bf566a40c41db8955127fd1def57c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9889130fe059595eec0ab3c8eb270ac4 |
publicationDate |
2020-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10811507-B2 |
titleOfInvention |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
abstract |
Embodiments of the invention are directed to configurations of semiconductor devices. A non-limiting example configuration includes a plurality of first transistors formed over a performance region of a major surface of a substrate. Each of the plurality of first transistors includes a first channel fin structure and a first gate structure along at least a portion of a sidewall surface of the first channel fin structure. The first gate structure includes a first gate thickness dimension. A plurality of second transistors is formed over a density region of the major surface of the substrate. Each of the plurality of second transistors includes a second channel fin structure and a second gate structure along at least a portion of a sidewall surface of the second channel fin structure, where the second gate structure includes a second gate thickness dimension that is less than the first gate thickness dimension. |
priorityDate |
2017-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |