| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-4652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49117 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-4652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-10 |
| filingDate |
2015-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efdc63387b9e353bf12decb16e3e6181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2b48e53b06820296d94bc135bc81c04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35d7b3ffb1012c2123bdf6f3dbe6ca0e |
| publicationDate |
2015-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015155185-A1 |
| titleOfInvention |
Remote Plasma System and Method |
| abstract |
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10011532-B2 |
| priorityDate |
2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |