| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2009-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b190ed4e07eb5afdaf80ddc78add0db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad5a3bccf788448167f42db8eb619156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae9acd6d737cf2c81e80319f842d42eb |
| publicationDate |
2011-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011108792-A1 |
| titleOfInvention |
Single Crystal Phase Change Material |
| abstract |
A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing a single crystal of a phase change material on the electrode in the via hole. A phase change memory (PCM) cell includes an electrode comprising an electrode material; a dielectric layer over the electrode; a via hole in the dielectric layer; and a single crystal of a phase change material located in the via hole, the single crystal contacting the electrode at the bottom of the via hole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355703-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10719903-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10700274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828785-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014070155-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014043109-A1 |
| priorityDate |
2009-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |