http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014043109-A1

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filingDate 2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65c54ad40dff415ce3fa36aae7ab3ba2
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publicationDate 2014-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2014043109-A1
titleOfInvention Single-crystal phase change material on insulator for reduced cell variability
abstract Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a method of fabricating an electronic device is provided which includes the following steps. A single-crystal phase change material is formed on a first substrate. At least one first electrode in contact with a first side of the single-crystal phase change material is formed. The single-crystal phase change material and the at least one first electrode in contact with the first side of the single-crystal phase change material form a transfer structure on the first substrate. The transfer structure is transferred to a second substrate. At least one second electrode in contact with a second side of the single-crystal phase change material is formed. A single-crystal phase change material-containing structure and electronic device are also provided.
priorityDate 2012-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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