abstract |
The present invention provides a method of forming a dual work function metal gate microelectronics device 200 . In one aspect, the method includes forming nMOS and pMOS stacked gate structures 315 a and 315 b . The nMOS and pMOS stacked gate structures 315 a and 315 b each comprise a gate dielectric 205 , a first metal layer, 305 located over the gate dielectric 205 and a sacrificial gate layer 310 located over the first metal layer 305 . The method further includes removing the sacrificial gate layer 310 in at least one of the nMOS or pMOS stacked gate structures, thereby forming a gate opening 825 and modifying the first metal layer 305 within the gate opening 825 to form a gate electrode with a desired work function. |