Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201f76e45dcff7217058823f62cb8e1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33b0ef2dd4bd9622eb89f8bba4eda9ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa0d3fb6befb7d3b8b1e72cc1a09a554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_feb889310fc8aa003aa7df1b0e6b2b06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28f899cfa6aa9bf059c6b8fb5ab488be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9edd55119a11aa9e93bae00fffc86af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c539cdc4e52be2e966028227aeed4a42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6f5ba2dce482c579d6015b0795b7f66 |
publicationDate |
2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8035173-B2 |
titleOfInvention |
CMOS transistors with differential oxygen content high-K dielectrics |
abstract |
An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9608066-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492247-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224655-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508583-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530974-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859410-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013062704-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8766378-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9218977-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8470662-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012043622-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014113443-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8928064-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012181617-A1 |
priorityDate |
2007-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |