http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008197421-A1

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filingDate 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9880b48c15ac9898e1f4bf90abd4e1ae
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publicationDate 2008-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008197421-A1
titleOfInvention Semiconductor device and method for manufacturing the same
abstract A semiconductor device includes a p-type active region and an n-type active region which are formed in a semiconductor substrate and a p-type MISFET including a gate insulating film formed on the p-type active region and a first gate electrode including a first electrode formation film of which upper part has a concentration of La higher than the other part thereof. The semiconductor device further includes an n-type MISFET including a gate insulating film formed on the n-type active region and a second gate electrode including a second electrode formation film of which upper part has a concentration of Al higher than the other part thereof.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009309165-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010148280-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009008725-A1
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priorityDate 2007-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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