| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2002-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7724e2a6076727d924cdafb80784f8cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3dacfc14fe9e6d001ce69f822bd0032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_613dbf03e6cc87d67477172134f4f9dd |
| publicationDate |
2003-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003010961-A1 |
| titleOfInvention |
Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby |
| abstract |
A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6924242-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005133931-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7064060-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005090122-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014206203-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005191847-A1 |
| priorityDate |
2001-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |