| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_709c7bfb5c940e8b8df255bb8359ddcc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e701a6371e470f08800af7ec7b4073e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a225a674b36f380862085870aeeb13ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e34ca78e33e046a23f7a476ccf11c32 |
| publicationDate |
2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005090122-A1 |
| titleOfInvention |
Sioc properties and its uniformity in bulk for damascene applications |
| abstract |
A method of forming a low-k dielectric material layer comprising the following steps. A first dielectric material sub-layer is formed over a substrate. The first dielectric material sub-layer is treated with an energy treatment to form a hardened layer on the upper surface of the first dielectric material sub-layer. A second dielectric material sub-layer is formed over the hardened layer, wherein the first dielectric sub-layer, the hardened layer and the second dielectric sub-layer comprise the low-k dielectric material layer. And a dual damascene structure and a dielectric material structure formed thereby. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772182-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010216303-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007205516-A1 |
| priorityDate |
2003-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |