Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
filingDate |
2020-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90232432b1b2a1f0cdb01aa84d55af9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e89aa741903ae9e663d6b0e913e32d9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb |
publicationDate |
2022-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11482612-B2 |
titleOfInvention |
Vertical transistor having bottom spacers on source/drain regions with different heights along junction region |
abstract |
A method for manufacturing a semiconductor device includes forming a plurality of fins on a semiconductor substrate. In the method, sacrificial spacer layers are formed on the plurality of fins, and portions of the semiconductor substrate located under the sacrificial spacer layers and located at sides of the plurality of fins are removed. Bottom source/drain regions are grown in at least part of an area where the portions of the semiconductor substrate were removed, and sacrificial epitaxial layers are grown on the bottom source/drain regions. The method also includes diffusing dopants from the bottom source/drain regions and the sacrificial epitaxial layers into portions of the semiconductor substrate under the plurality of fins. The sacrificial epitaxial layers are removed, and bottom spacers are formed in at least part of an area where the sacrificial epitaxial layers were removed. |
priorityDate |
2018-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |