| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e58feb1a4ef666799adb5bf00033387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_322ed12e87490de7b998da7b067b5ff7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05f1f86d9fa7250567755f12c7d0d53 |
| publicationDate |
2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10157798-B1 |
| titleOfInvention |
Uniform bottom spacers in vertical field effect transistors |
| abstract |
A method for forming a semiconductor device includes forming a semiconductor fin over a surface of a substrate and forming sacrificial spacers on first and second sides of the semiconductor fin. The first side opposes the second side. The method includes recessing the surface to expose second and third surfaces, recessing the second surface to form a first cavity between the sacrificial spacers and the substrate on the first side, and recessing the third surface to form a second cavity between the sacrificial spacers and the substrate on the second side. The method includes forming a first bottom spacer in the first cavity and forming a second bottom spacer in the second cavity. A thickness of the first bottom spacer in a direction between the sacrificial spacers and the substrate is substantially equal to a thickness of the second bottom spacer in the same direction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646362-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515427-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021391473-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177367-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022037210-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020052094-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11295986-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189712-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022246536-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930758-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757036-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022320128-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742246-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023031574-A1 |
| priorityDate |
2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |