| abstract |
Disclosed embodiments include a multi-chip package that includes a stacked through-silicon via in a first semiconductive device, and the first semiconductive device is face-to-face coupled to a second semiconductive device by the stacked through-silicon via. The stacked through-silicon via includes a first portion that contacts a second portion, and the first portion emerges from an active semiconductive region of the first semiconductive device adjacent a keep-out region. |