| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10f81dee68f58e698f50e54cb97b6bff |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23e718f2c8ca185d95f6e424e36930c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d90f0732571f7fd9921e2b076f6ee535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1247ad35e11a46fc088131557e617ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32fb6eed62bf1b023ae6485231663aa9 |
| publicationDate |
2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10937861-B2 |
| titleOfInvention |
Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack |
| abstract |
A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer. |
| priorityDate |
2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |