patent/US-2013049132-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013049132-A1

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filingDate	2011-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10ef8bfc6c8f63b049e4248e05d85c05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b256f4dca6d9d13d36fe414c447f4b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_306c381c6e22f57fce3bdf45eee6054e
publicationDate	2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2013049132-A1
titleOfInvention	Parasitic capacitance reduction in mosfet by airgap ild
abstract	The instant disclosure relates to MOSFET semiconductor structures exhibiting a reduced parasitic capacitance, as well as methods of making the MOSFET semiconductor structures. The MOSFET semiconductor structures of the instant disclosure comprise an air-gap interlayer dielectric material between the contacts to the source/drain and gate structures and gate stack structures. The air-gap interlayer dielectric material causes the MOSFET semiconductor structures of the instant disclosure to have a reduced parasitic capacitance.
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priorityDate	2011-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 99.