Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec8299a06c6bcc281640c877287e2e66 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32899 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
filingDate |
2013-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ed0eedae7f460e2402e3547eaeb6edb |
publicationDate |
2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10014192-B2 |
titleOfInvention |
Apparatus for atomic layering etching |
abstract |
A substrate processing system having a processing chamber for etching a layer on a substrate is provided. The system includes a chuck upon which the substrate is disposed during etching. The system also includes the chamber being divided into a plasma generating region and a substrate processing region by a separating plate structure. The system further includes a plasma source for generating plasma in the plasma generating region. The system further includes logic for introducing a first gas into the chamber, wherein the gas is suitable for etching the layer. The logic also allows the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The logic further replaces the first gas with an inert gas, generates metastables from the inert gas, and etches the layer with the metastables. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11154903-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239083-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688606-B2 |
priorityDate |
2011-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |