| abstract |
A method for manufacturing a semiconductor element package according to an embodiment of the present invention includes: bonding a first die to a first side of an interposer, the interposer including a substrate; and after bonding the first die to the first side of the interposer, Depositing a first insulating layer on a second side of the interposer opposite to the first side; patterning an opening through the substrate and the first insulating layer; and in the first insulating layer A second insulating layer is deposited on and along the sidewalls and lateral surfaces of the opening. The second insulating layer includes silicon. The method further includes: removing a lateral portion of the second insulating layer to define a sidewall spacer on a sidewall of the opening; and forming a perforation in the opening, wherein the perforation is electrically connected to the opening First grain. |