http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980050124-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
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filingDate 1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1998-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19980050124-A
titleOfInvention Metal wiring formation method of semiconductor device
abstract The present invention relates to a method for forming a metal wiring of a semiconductor device, in order to have a high etching selectivity with respect to the photosensitive film when forming the tungsten wiring, the increase of the source power, the decrease of the bias power and the ratio of the etching gas during the etching parameters Technology to improve the etching selectivity. In addition, when the etching selectivity for the photoresist film is increased in the same manner as above, the etching process is performed at a low temperature to solve a problem in which recesses rounded to the inner wall of the metal wiring are generated. This allows the formation of metal wires with vertical sidewall profiles.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100399442-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100425467-B1
priorityDate 1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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