http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100555484-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1999-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100555484-B1 |
| titleOfInvention | Tungsten wiring manufacturing method of semiconductor device |
| abstract | A tungsten wiring manufacturing method of a semiconductor device is disclosed. In one aspect of the present invention, a hard mask layer including a tungsten (W) layer and titanium nitride (TiN) is formed on a semiconductor substrate. A deep UV photoresist pattern is formed on the hard mask layer by a photolithography process through an antireflection layer. The hard mask layer exposed by the deep ubiquitous photoresist pattern is etched to form a hard mask pattern. After the tungsten layer exposed by the hard mask pattern is etched to form a tungsten pattern, the hard mask pattern is removed. |
| priorityDate | 1999-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.