http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100425467-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2001-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100425467-B1 |
| titleOfInvention | Method of dry etching for semiconductor device |
| abstract | Disclosed is a dry etching method for a semiconductor device in which a wiggling, striation, or pattern collapse does not occur even when an ArF photoresist pattern is used as an etching mask. In the dry etching method for a semiconductor device according to the present invention, forming an etched material layer on a semiconductor substrate, and forming a photoresist pattern on the etched material layer using an exposure light source photoresist having a wavelength of 193 nm or less And loading the semiconductor substrate on which the photoresist pattern is formed onto a stage in a dry etching chamber, and cooling the semiconductor substrate to a temperature below a predetermined temperature to dry etch the etching target material layer. In the etching of the etched material layer, the lowering of the semiconductor substrate is preferably performed at a chiller temperature of 5 ° C. or lower and −20 ° C. or higher in connection with the stage to control a temperature of a coolant cooling the stage. Set to. |
| priorityDate | 2001-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.