| abstract |
The semiconductor device has a first interconnect structure formed on a carrier. The semiconductor die is placed on the first interconnect structure after the first interconnect structure has been tested to be good. The semiconductor die is a known good die. Vertical interconnect structures such as bumps or stud bumps are formed on the first interconnect structure. Individual semiconductor devices are located on the first interconnect structure or on the first interconnect structure. An encapsulant is deposited on the semiconductor die, the first interconnect structure, and the second interconnect structure. A portion of the encapsulant is removed to expose the vertical interconnect structure. A second interconnect structure is formed on the encapsulant and is electrically connected with the vertical interconnect structure. The first interconnect structure or the second interconnect structure includes an insulating layer having embedded glass fabric, glass cross, filler or fiber. |