| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor fine gap fill polymer, wherein air voids and the like are commonly used in a spin coating method for semiconductor substrates having a diameter of 100 nm or less and a hole having an aspect ratio of 1 or more in terms of height / diameter. Complete gap fill is possible without defects, the film can be melted to the desired thickness by alkaline aqueous solution (referred to as developer), has excellent storage stability, and isopropyl alcohol (IPA) after curing by baking. And a strong resistance to plasma etching, and can be quickly removed from inside the hole by ashing treatment.n n n Gap Fill, Dissolution Rate, Spin Coating, Storage Stability, Plasma Etching, Ashing, Semiconductor |