| abstract |
The present invention relates to an upper antireflection film polymer used in a photolithography process of a semiconductor device manufacturing process, a method of manufacturing the same, and an upper antireflection film composition containing the same, and more particularly, to a semiconductor device of 50 nm or less. A top anti-reflective polymer or the like dedicated to immersion lithography.n n n When the upper anti-reflection film is formed using a polymer having the structure of Formula 1, since it is insoluble in water, it is not only applicable to emulsion lithography using water as a medium for the light source, but also to reduce the reflectance from the lower layer. Since the uniformity can be increased, it is possible to form an ultrafine pattern.n n n [Formula 1]n n n n n n n n In the above formula, R1, R2 and R3 each represent hydrogen or a methyl group, and a, b and c each represent a mole fraction of each monomer and represent 0.05 to 0.9, respectively. |