http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101233385-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-04 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 |
filingDate | 2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101233385-B1 |
titleOfInvention | Compound for fine gap fill of semiconductor device, composition comprising same and method for manufacturing semiconductor capacitor |
abstract | Disclosed are a compound that can be used in a node separation process for manufacturing a semiconductor capacitor and a composition for a semiconductor fine gapfill including the same. The composition for the semiconductor microgap fill does not significantly change in molecular weight depending on the number of storage days, and melts at a desired dissolution rate (DR) in a developer having an alkali, and at the same time, the development speed does not change significantly depending on the storage days. Excellent stability |
priorityDate | 2008-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 86.