| abstract |
A gap-filler forming composition which, as a lithographic gap-filler superior in flattenability on a substrate having irregularities such as holes or trenches, causing no intermixing with a resist layer, and having a high dry etching rate as compared with the resist, is used in producing semiconductor devices by a method using the gap-filler to cover the resist on the substrate having holes having an aspect ratio, defined as height/diameter, of 1 or above to transfer images onto the substrate by utilization of lithographic process, the composition being used to coat the substrate prior to the coating of the resist so as to flatten the substrate surface, the composition being characterized by containing a polymer solution consisting of a polymer and a solvent. |