http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100707767-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 2000-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100707767-B1 |
| titleOfInvention | Positive photoresist composition |
| abstract | A positive photoresist composition comprising at least a polysiloxane (1) comprising a structural unit represented by the following general formula (I) as a copolymerization component.n n n n n n n n In formula (I), L represents a single bond or an arylene group. A 'represents an aromatic ring or an alicyclic structure, and may each have a substituent. n represents the integer of 1-6.n n n The positive photoresist composition of the present invention using the polysiloxane of the present invention has a high sensitivity and a rectangular resist with high resolution. In addition, when used as an upper layer resist of a two-layer resist system, when the pattern is transferred to the lower layer using an oxygen-based plasma etching process, it is possible to form a fine pattern with little dimensional shift and a high aspect ratio. |
| priorityDate | 1999-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 321.