| abstract |
The present invention is an etching solution composition used for selective pattern etching of aluminum or aluminum alloy of a transparent conductive film (ITO film or IZO film) formed in a fine pattern in a thin film transistor manufacturing process of a flat panel display such as a thin film transistor liquid crystal display device It is about.n n n These compositions comprise 0.1-15% by weight of chlorine-containing compounds, 0.1-15% by weight of auxiliary oxidants, 0.1-15% by weight of etch regulators, 0.5-5% by weight of inhibitors, 0-50% by weight of aging The composition is composed of the change inhibitor and the remainder as water (H 2 O).n n n In the present invention, when applied for pattern etching of an ITO or IZO film, which is a transparent conductive film formed by a fine pattern, unlike the conventional etching solution for ITO film, there is almost no invasion phenomenon for aluminum or aluminum alloy mainly used as electrode material of a thin film transistor. This reduces inventory costs and improves process yields.n n n n Transparent conductive film, ITO, IZO, etching solution |