http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050006203-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-0056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate | 2003-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050006203-A |
| titleOfInvention | Polishing fluid and polishing method |
| abstract | The polishing liquid contains an oxidizing agent, a metal oxide dissolving agent, a metal anticorrosive agent and water, and is a polishing liquid having a pH of 2 to 5, and the metal oxide dissolving agent is the first dissociation except four kinds of lactic acid, phthalic acid, fumaric acid, maleic acid and amino acetic acid. Dissociation constant of possible acidic group (pKa) <3.7 acid (Group A), ammonium salt of Group A and esters of Group A and at least one of the four acids and acids of pKa≥3.7 (Group B) , At least one of the group B ammonium salts and group B esters, or at least one of the groups of aromatic compounds in which the metal anticorrosive has a triazole skeleton, an aliphatic compound having a triazole skeleton, a pyrimidine skeleton, It includes at least one of the group of each compound having any one of a doazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. Since the polishing rate of the metal is high, the etching rate is small, and the polishing friction is low, a semiconductor device having high productivity and small dishing and erosion of the metal wiring can be obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8425276-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200036790-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8508273-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210154556-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101153685-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100601740-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778217-B2 |
| priorityDate | 2002-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 216.