http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100489312-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-00 |
| filingDate | 2001-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100489312-B1 |
| titleOfInvention | Positive-working photoresist composition |
| abstract | The present invention discloses a positive photoresist composition suitable for patterned exposure with light having a wavelength of 200 nm or less. The photoresist composition contains a resin compound in which solubility in an alkaline aqueous solution is increased by the action of an acid, a radiation-sensitive acid generating compound capable of generating an acid by irradiation, and an organic solvent. It is a copolymer formed by combining three specific (meth) acrylate units as a monomer unit. It is characterized by the above-mentioned. The patterned resist layer formed from the photoresist composition has the advantage that the line slimming caused by electron beam irradiation during SEM observation is reduced. |
| priorityDate | 2000-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 100.