http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63231331-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-00 |
| filingDate | 1987-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_580d3d283fb010b5dfbdc522e5dbc932 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3e358d9fe4cf6aa9965332c46884ed0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15249f25a7367681371413a812ea6f40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a7a9e8b92f6560aaadfc5d872279823 |
| publicationDate | 1988-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63231331-A |
| titleOfInvention | Fine pattern forming method |
| abstract | PURPOSE:To permit formation of fine patterns having excellent resolution, sensitivity and oxygen plasma resistance by using a photosensitive resin compsn. essentially consisting of a specific alkali soluble org. silicone polymer and photosensitive dissolution inhibitor on top of two-layered resists. CONSTITUTION:The photosensitive resin compsn. essentially consisting of the alkali soluble polyorganosylsesquioxane polymer, of which the whole or part of the side chains are an org. group having a phenolic hydroxyl group, and the photosensitive dissolution inhibitor such as, for example, o-quinonediazide, is used for the 2nd resist layer 3 in a two-layer resist method consisting in providing the 1st resist layer 2 and the 2nd resist layer 3 successively on a substrate 1 and subjecting the layer 3 to exposing and developing to form a pattern exposed the desired part of the layer 2 dry etching the exposed part of the layer 2 to form the fine patterns. Such compsn. is the positive type resist having the excellent resolution, sensitivity and oxygen plasma resistance, by which the fine patterns of submicron order having a high aspect ratio are obtd. with high accuracy. In addition, the currently used alkali development method is usable as it is. This method is thus favorable in practicable use. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03035932-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0627671-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04130324-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002543582-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5510653-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0065408-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011028225-A |
| priorityDate | 1987-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.