abstract |
(57) [Problem] To reduce the interdiffusion between a resist and the composition for an anti-reflection film, to have excellent resolution and resist thickness dependency Moreover, the present invention provides a composition which provides an antireflection film having an excellent dry etching rate. SOLUTION: (A) A polymer having a specific repeating unit as a light absorbing component, and (B) Melamine, guanamine, glycol substituted with a methylol group, an alkoxymethyl group or an acyloxymethyl group. A composition for an antireflection film containing a derivative of uryl or urea, or (C) a derivative of phenol, naphthol or hydroxyanthracene in which two hydrogen atoms are substituted by a methylol group, an alkoxymethyl group or an acyloxymethyl group, and Resist pattern using this composition A method for forming a mask is provided. |